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STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

Yougou Electronics (Shenzhen) Co., Ltd.
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    Buy cheap STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3 from wholesalers
     
    Buy cheap STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3 from wholesalers
    • Buy cheap STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3 from wholesalers
    • Buy cheap STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3 from wholesalers

    STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

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    Model Number : STW48N60DM2
    Brand Name : Original
    Price : Negotiable
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    STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

    STW48N60DM2 N-Channel MDmesh DM2 Power MOSFET - High-Efficiency Power Conversion Solution

    Achieve Optimal Efficiency with Fast Recovery and Low On-Resistance


    Looking for a high-performance power MOSFET that can meet the demands of the most efficient converters? The STW48N60DM2 N-Channel MOSFET is the solution you've been searching for. This powerful MOSFET is a part of the MDmesh DM2 Fast Recovery Diode family and boasts some impressive features that make it ideal for switch applications, bridge topologies, and ZVS phase-shift converters. One of the key features of the STW48N60DM2 is its fast recovery body diode.


    This diode allows for very low recovery charge (Qrr) and time (trr) and low RDS(on). Additionally, this MOSFET has very low gate charge and input capacitance, making it the perfect choice for high-efficiency converters. It has also been 100% avalanche tested and has very high dv/dt durability, ensuring exceptional performance and longevity. For added peace of mind, the STW48N60DM2 MOSFET is equipped with zener protection, ensuring its safe and reliable operation. With its impressive features and exceptional performance, the STW48N60DM2 is the perfect choice for anyone looking to achieve optimal efficiency in their power conversion applications.



    Category

    Discrete Semiconductor Products

    Transistors - FETs, MOSFETs - Single

    Package

    Tube

    Product Status

    Active

    FET Type

    N-Channel

    Technology

    MOSFET (Metal Oxide)

    Drain to Source Voltage (Vdss)

    600 V

    Current - Continuous Drain (Id) @ 25°C

    40A (Tc)

    Drive Voltage (Max Rds On, Min Rds On)

    10V

    Rds On (Max) @ Id, Vgs

    79mOhm @ 20A, 10V

    Vgs(th) (Max) @ Id

    5V @ 250µA

    Gate Charge (Qg) (Max) @ Vgs

    70 nC @ 10 V

    Vgs (Max)

    ±25V

    Input Capacitance (Ciss) (Max) @ Vds

    3250 pF @ 100 V

    FET Feature

    -

    Power Dissipation (Max)

    300W (Tc)

    Operating Temperature

    -55°C ~ 150°C (TJ)

    Mounting Type

    Through Hole

    Package / Case

    TO-247-3

    Base Product Number

    STW48

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